Higher Power Conversion Efficiency on Silicon based Heterojunction Device with FeZnO Dilute Magnetic Semiconductors

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c © 2008 by John von Neumann Institute for Computing Permission to make digital or hard copies of portions of this work for personal or classroom use is granted provided that the copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise requires prior specific permission by the publisher ment...

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ژورنال

عنوان ژورنال: IOP Conference Series: Materials Science and Engineering

سال: 2020

ISSN: 1757-899X

DOI: 10.1088/1757-899x/993/1/012159